- 큰 재고
- 클라우드 가격
FET, MOSFET
| 사진 | 제조업체 부품 번호 | 재고 상태 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | FET 유형 | 기술 | 드레인-소스 전압(Vdss) | 전류 - 연속 드레인(Id) @ 25°C | 구동 전압(최대 Rds 켜짐, 최소 Rds 켜짐) | Rds 켜짐(최대) @ Id, Vgs | Vgs(th) (최대) @ Id | 게이트 충전(Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스(Ciss) (최대) @ Vds | FET 기능 | 전력 소모(최대) | 작동 온도 | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AOK015V75X2Q750V SILICON CARBIDE MOSFET |
226 |
|
데이터시트 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 96A (Tc) | 15V | 22mOhm @ 24A, 15V | 3.5V @ 24mA | 152 nC @ 15 V | +15V, -5V | 4880 pF @ 400 V | - | 312W (Tj) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247 |
|
|
AOM015V75X2Q750V SILICON CARBIDE MOSFET |
205 |
|
데이터시트 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 96A (Tc) | 15V | 22mOhm @ 24A, 15V | 3.5V @ 24mA | 152 nC @ 15 V | +15V, -5V | 4880 pF @ 400 V | - | 312W (Tj) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
|
IMW65R010M2HXKSA1IMW65R010M2HXKSA1 |
396 |
|
데이터시트 |
CoolSiC™ | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 130A (Tc) | 15V, 20V | 9.1mOhm @ 92.1A, 20V | 5.6V @ 18.7mA | 112 nC @ 18 V | +23V, -7V | 4001 pF @ 400 V | - | 440W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-3-40 |
|
|
G3F20MT12K1200V 20M TO-247-4 G3F SIC MOSFE |
595 |
|
데이터시트 |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-4 |
|
|
NVHL070N120M3SSIC MOS TO247-3L 70MOHM 1200V M3 |
410 |
|
데이터시트 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 34A (Tc) | 18V | 87mOhm @ 15A, 18V | 4.4V @ 7mA | 57 nC @ 18 V | +22V, -10V | 1230 pF @ 800 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
|
|
S3M0016120BMOSFET SILICON CARBIDE SIC 1200V |
300 |
|
데이터시트 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 106A (Tc) | 18V | 23mOhm @ 75A, 18V | 4V @ 30mA | 287 nC @ 18 V | +22V, -8V | 5251 pF @ 1000 V | - | 576W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
|
IMZA65R010M2HXKSA1IMZA65R010M2HXKSA1 |
400 |
|
데이터시트 |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 144A (Tc) | 15V, 20V | 9.1mOhm @ 92.1A, 20V | 5.6V @ 18.7mA | 112 nC @ 18 V | +23V, -7V | 4001 pF @ 400 V | - | 440W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-8 |
|
|
E4M0025075J2-TRMOSFETS 3055 PF 281W 3.8V 114 NC |
524 |
|
데이터시트 |
E | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 84A (Tc) | 15V | 34mOhm @ 33.5A, 15V | 3.8V @ 9.22mA | 114 nC @ 15 V | +19V, -8V | 3055 pF @ 500 V | - | 281W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
|
|
E4M0025075K1MOSFETS AUTOMOTIVE 262W 3.8V NC |
286 |
|
데이터시트 |
E | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 80A (Tc) | 15V | 34mOhm @ 33.5A, 15V | 3.8V @ 9.22mA | 119 nC @ 15 V | +19V, -8V | 3055 pF @ 500 V | - | 262W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
|
AIMBG120R020M1XTMA1SIC_DISCRETE |
864 |
|
데이터시트 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 104A (Tc) | 18V, 20V | 25mOhm @ 43A, 20V | 5.1V @ 15mA | 82 nC @ 20 V | +23V, -5V | 2667 pF @ 800 V | - | 468W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-12 |
|
|
IMZC120R012M2HXKSA1IMZC120R012M2HXKSA1 |
215 |
|
데이터시트 |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 129A (Tc) | 15V, 18V | 12mOhm @ 57A, 18V | 5.1V @ 17.8mA | 124 nC @ 18 V | +23V, -7V | 4050 pF @ 800 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-17 |
|
APT1201R2BFLLGMOSFET N-CH 1200V 12A TO247 |
274 |
|
데이터시트 |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | - | 1.25Ohm @ 6A, 10V | 5V @ 1mA | 100 nC @ 10 V | - | 2540 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
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|
IXFX32N80Q3MOSFET N-CH 800V 32A PLUS247-3 |
600 |
|
데이터시트 |
HiPerFET™, Q3 Class | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 32A (Tc) | 10V | 270mOhm @ 16A, 10V | 6.5V @ 4mA | 140 nC @ 10 V | ±30V | 6940 pF @ 25 V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
|
|
G3F18MT12J-TR1200V 18M TO-263-7 G3F SIC MOSFE |
800 |
|
데이터시트 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 122A (Tc) | 18V | 25mOhm @ 45A, 18V | 4.3V @ 35mA | 212 nC @ 18 V | +22V, -10V | 4962 pF @ 800 V | - | 526W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
|
|
C3M0021120K1MOSFET N-CH 1200V 104A TO247-4L |
869 |
|
데이터시트 |
- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 104A (Tc) | 15V | 29mOhm @ 62.1A, 15V | 3.8V @ 17.1mA | 177 nC @ 15 V | +19V, -8V | 5100 pF @ 1000 V | - | 405W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
|
AOM020V120X2Q1200V SILICON CARBIDE MOSFET |
217 |
|
데이터시트 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 89A (Tc) | 15V | 28mOhm @ 27A, 15V | 2.8V @ 27mA | 166 nC @ 15 V | +15V, -5V | 5180 pF @ 800 V | - | 348W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
|
TW030Z120C,S1FG3 1200V SIC-MOSFET TO-247-4L 3 |
105 |
|
데이터시트 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 18V | 41mOhm @ 30A, 18V | 5V @ 13mA | 82 nC @ 18 V | +25V, -10V | 2925 pF @ 800 V | - | 249W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
|
|
G3F18MT12K1200V 18M TO-247-4 G3F SIC MOSFE |
595 |
|
데이터시트 |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
E3M0032120J2-TR32m, 1200V SiC FET, TO-263-7 XL |
729 |
|
데이터시트 |
E | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 74A (Tc) | 15V | 43mOhm @ 38.9A, 15V | 3.8V @ 10.7mA | 108 nC @ 15 V | +19V, -8V | 3460 pF @ 1000 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
|
SCTH100N65G2-7AGSICFET N-CH 650V 95A H2PAK-7 |
876 |
|
데이터시트 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 95A (Tc) | 18V | 26mOhm @ 50A, 18V | 5V @ 5mA | 162 nC @ 18 V | +22V, -10V | 3315 pF @ 520 V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | H2PAK-7 |
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