- 큰 재고
- 클라우드 가격
FET, MOSFET
| 사진 | 제조업체 부품 번호 | 재고 상태 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | FET 유형 | 기술 | 드레인-소스 전압(Vdss) | 전류 - 연속 드레인(Id) @ 25°C | 구동 전압(최대 Rds 켜짐, 최소 Rds 켜짐) | Rds 켜짐(최대) @ Id, Vgs | Vgs(th) (최대) @ Id | 게이트 충전(Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스(Ciss) (최대) @ Vds | FET 기능 | 전력 소모(최대) | 작동 온도 | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AOM015V65X2650V SILICON CARBIDE MOSFET |
238 |
|
데이터시트 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 96A (Tc) | 15V | 22mOhm @ 24A, 15V | 3.5V @ 24mA | 152 nC @ 15 V | +15V, -5V | 4880 pF @ 400 V | - | 312W (Tj) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
|
AOK015V65X2650V SILICON CARBIDE MOSFET |
238 |
|
데이터시트 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 96A (Tc) | 15V | 22mOhm @ 24A, 15V | 3.5V @ 24mA | 152 nC @ 15 V | +15V, -5V | 4880 pF @ 400 V | - | 312W (Tj) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
|
|
C3M0025075K1SICFET N-CH 750V 80A TO247 |
184 |
|
데이터시트 |
- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 80A (Ta) | 15V | 34mOhm @ 33.5A, 15V | 3.8V @ 9.22mA | 119 nC @ 15 V | -8V, +19V | 3055 pF @ 500 V | - | 262W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
|
NVHL025N065SC1SIC MOS TO247-3L 650V |
450 |
|
데이터시트 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 99A (Tc) | 15V, 18V | 28.5mOhm @ 45A, 18V | 4.3V @ 15.5mA | 164 nC @ 18 V | +22V, -8V | 3480 pF @ 325 V | - | 348W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
|
|
NSF040120L4A0QNSF040120L4A0/SOT8071/TO247-4L |
432 |
|
데이터시트 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 65A (Tj) | 15V, 18V | 60mOhm @ 40A, 15V | 2.9V @ 4mA | 95 nC @ 15 V | +22V, -10V | 2600 pF @ 800 V | - | 306W (Tj) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
|
|
NVH4L025N065SC1SIC MOS TO247-4L 650V |
882 |
|
데이터시트 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 99A (Tc) | 15V, 18V | 28.5mOhm @ 45A, 18V | 4.3V @ 15.5mA | 164 nC @ 18 V | +22V, -8V | 3480 pF @ 325 V | - | 348W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
|
IPQC60R010S7XTMA1MOSFET |
750 |
|
데이터시트 |
CoolMOS™ S7 | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 12V | 10mOhm @ 50A, 12V | 4.5V @ 3.08mA | 318 nC @ 12 V | ±20V | - | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22 |
|
|
NTHL019N60S5FSUPERFET5 FRFET, 19MOHM, TO-247- |
442 |
|
데이터시트 |
SuperFET® V, FRFET® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 75A (Tc) | 10V | 19mOhm @ 37.5A,10V | 4.8V @ 15.7mA | 252 nC @ 10 V | ±30V | 13400 pF @ 400 V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
E3M0040120J2-TR40m, 1200V SiC FET, TO-263-7 XL |
736 |
|
데이터시트 |
E | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 63A (Tc) | 15V | 53mOhm @ 31.9A, 15V | 3.8V @ 8.77mA | 91 nC @ 15 V | +19V, -8V | 2726 pF @ 1000 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
|
|
AOM020V120X21200V SILICON CARBIDE MOSFET |
230 |
|
데이터시트 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 89A (Tc) | 15V | 28mOhm @ 27A, 15V | 2.8V @ 27mA | 166 nC @ 15 V | +18V, -8V | 5180 pF @ 800 V | - | 348W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
|
S2M0016120D-1MOSFET SILICON CARBIDE SIC 1200V |
300 |
|
데이터시트 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 140A (Tc) | 18V, 20V | 23mOhm @ 75A, 20V | 3.6V @ 23mA | 285 nC @ 20 V | +20V, -5V | 4540 pF @ 1000 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD |
|
|
NVH4L030N120M3SSILICON CARBIDE (SIC) MOSFET-ELI |
393 |
|
데이터시트 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 73A (Tc) | 18V | 39mOhm @ 30A, 18V | 4.4V @ 15mA | 107 nC @ 18 V | +22V, -10V | 2430 pF @ 800 V | - | 313W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
|
S2M0016120K-1MOSFET SILICON CARBIDE SIC 1200V |
147 |
|
데이터시트 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 140A (Tc) | 18V, 20V | 23mOhm @ 75A, 20V | 3.6V @ 23mA | 285 nC @ 20 V | +20V, -5V | 4540 pF @ 1000 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
TSG65N068CE RVG650V, 30A, PDFN88, E-MODE GAN TR |
2,962 |
|
데이터시트 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
C3M0065100J-TRSICFET N-CH 1000V 35A TO263-7 |
788 |
|
데이터시트 |
C3M™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 1000 V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 3.5V @ 5mA | 35 nC @ 15 V | +15V, -4V | 660 pF @ 600 V | - | 113.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
|
G3F20MT12J-TR1200V 20M TO-263-7 G3F SIC MOSFE |
800 |
|
데이터시트 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 108A (Tc) | 18V | 26.5mOhm @ 40A, 18V | 4.3V @ 30mA | 176 nC @ 18 V | +22V, -10V | 4317 pF @ 800 V | - | 448W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
|
|
IMZA75R016M1HXKSA1SILICON CARBIDE MOSFET |
210 |
|
데이터시트 |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 89A (Tj) | 15V, 20V | 15mOhm @ 41.5A, 20V | 5.6V @ 14.9mA | 81 nC @ 18 V | +23V, -5V | 2869 pF @ 500 V | - | 319W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4 |
|
|
AIMZA75R016M1HXKSA1SICFET N-CH 750V 89A PG-TO247-4 |
213 |
|
데이터시트 |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 89A (Tc) | 15V, 20V | 22mOhm @ 41.5A, 18V | 5.6V @ 14.9mA | 81 nC @ 18 V | +23V, -5V | 2869 pF @ 500 V | - | 319W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4 |
|
|
DIF120SIC053-AQMOSFET TO-247-4L N 65A 1200V |
433 |
|
데이터시트 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 65A (Tc) | 18V | 53mOhm @ 33A, 18V | 4V @ 9.5mA | 121 nC @ 15 V | - | 2070 pF @ 1000 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
|
|
DIW120SIC059-AQMOSFET TO-247-3L N 65A 1200V |
430 |
|
데이터시트 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 65A (Tc) | 18V | 53mOhm @ 33A, 18V | 4V @ 9.5mA | 121 nC @ 15 V | - | 2070 pF @ 1000 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247 |
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