단일 다이오드
| 사진 | 제조업체 부품 번호 | 재고 상태 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
JAN1N5617DIODE GEN PURP 400V 1A AXIAL |
177 |
|
데이터시트 |
- | A, Axial | Bulk | Active | Standard | 400 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 400 V | - | Military | MIL-PRF-19500/429 | Through Hole | A, Axial | -65°C ~ 175°C |
|
DSEP30-06ADIODE GEN PURP 600V 30A TO247AD |
990 |
|
데이터시트 |
HiPerFRED™ | TO-247-2 | Tube | Active | Standard | 600 V | 30A | 1.6 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 250 µA @ 600 V | - | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
IDM08G120C5XTMA1DIODE SIL CARB 1.2KV 8A TO252-2 |
1,688 |
|
데이터시트 |
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 8A | 1.95 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1200 V | 365pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO252-2 | -55°C ~ 175°C |
|
|
DNA30E2200PADIODE GEN PURP 2.2KV 30A TO220AC |
219 |
|
데이터시트 |
- | TO-220-2 | Tube | Active | Standard | 2200 V | 30A | 1.26 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 µA @ 2200 V | 7pF @ 700V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
1N5620DIODE GEN PURP 800V 1A AXIAL |
300 |
|
데이터시트 |
- | A, Axial | Bulk | Active | Standard | 800 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 800 V | - | - | - | Through Hole | A, Axial | -65°C ~ 200°C |
|
STPSC10H065DIDIODE SIC 650V 10A TO220AC INS |
999 |
|
데이터시트 |
- | TO-220-2 Insulated, TO-220AC | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.75 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | - | - | - | Through Hole | TO-220AC ins | -40°C ~ 175°C |
|
IDW100E60FKSA1DIODE GP 600V 150A TO247-3-1 |
388 |
|
데이터시트 |
- | TO-247-3 | Tube | Active | Standard | 600 V | 150A | 2 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 120 ns | 40 µA @ 600 V | - | - | - | Through Hole | PG-TO247-3-1 | -55°C ~ 175°C |
|
|
C3D06065IDIODE SIL CARB 650V 13A TO220-2 |
970 |
|
데이터시트 |
Z-Rec® | TO-220-2 Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 13A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 295pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2 Isolated Tab | -55°C ~ 175°C |
|
C3D08060ADIODE SIL CARB 600V 24A TO220-2 |
357 |
|
데이터시트 |
Z-Rec® | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 600 V | 24A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 600 V | 441pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
|
1N3611DIODE GEN PURP 200V 1A AXIAL |
341 |
|
데이터시트 |
- | A, Axial | Bulk | Active | Standard | 200 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 200 V | - | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
VS-30EPH06-N3DIODE GP 600V 30A TO247AC |
5,744 |
|
데이터시트 |
FRED Pt® | TO-247-2 | Tube | Active | Standard | 600 V | 30A | 2.6 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 31 ns | 50 µA @ 600 V | - | - | - | Through Hole | TO-247AC Modified | -65°C ~ 175°C |
|
STPSC12065DYDIODE SIL CARB 650V 12A TO220AC |
7,548 |
|
데이터시트 |
ECOPACK®2 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.45 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 600 V | 750pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | -40°C ~ 175°C |
|
|
ISL9R3060G2-F085DIODE GEN PURP 600V 30A TO247-2 |
418 |
|
데이터시트 |
Stealth™ | TO-247-2 | Tube | Active | Avalanche | 600 V | 30A | 2.4 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 100 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
UJ3D1210TSDIODE SIL CARB 1.2KV 10A TO220-2 |
8,990 |
|
데이터시트 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 1200 V | 510pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
DLA40IM800PC-TRLDIODE GEN PURP 800V 40A TO263AA |
1,266 |
|
데이터시트 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 800 V | 40A | 1.3 V @ 40 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 800 V | 10pF @ 400V, 1MHz | - | - | Surface Mount | TO-263AA | -55°C ~ 175°C |
|
IDK08G120C5XTMA1DIODE SIC 1.2KV 22.8A TO263-1 |
373 |
|
데이터시트 |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 22.8A | 1.95 V @ 8 A | No Recovery Time > 500mA (Io) | - | 40 µA @ 1200 V | 365pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2-1 | -55°C ~ 175°C |
|
DSI30-16AS-TRLDIODE GEN PURP 1.6KV 30A TO263AA |
2,638 |
|
데이터시트 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 1600 V | 30A | 1.29 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 µA @ 1600 V | 10pF @ 400V, 1MHz | - | - | Surface Mount | TO-263AA | -40°C ~ 175°C |
|
|
DSEP29-12ADIODE GEN PURP 1.2KV 30A TO220AC |
774 |
|
데이터시트 |
HiPerFRED™ | TO-220-2 | Tube | Active | Standard | 1200 V | 30A | 2.75 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 40 ns | 250 µA @ 1200 V | - | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
JANTX1N3611DIODE GEN PURP 200V 1A AXIAL |
356 |
|
데이터시트 |
- | A, Axial | Bulk | Active | Standard | 200 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 200 V | - | Military | MIL-PRF-19500/228 | Through Hole | A, Axial | -65°C ~ 175°C |
|
DSEI30-10ADIODE GEN PURP 1KV 30A TO247AD |
445 |
|
데이터시트 |
- | TO-247-2 | Tube | Active | Standard | 1000 V | 30A | 2.4 V @ 36 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 750 µA @ 1000 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |

